FQT1N80TF-WS

MOSFET N-CH 800V 200MA SOT223-3
NOVA Part#:
312-2285244-FQT1N80TF-WS
Manufacturer:
Manufacturer Part No:
FQT1N80TF-WS
Standard Package:
4,000
Technical Datasheet:

N-Channel 800 V 200mA (Tc) 2.1W (Tc) Surface Mount SOT-223-3

More Information
CategoryTransistors - FETs, MOSFETs - Single
Manufactureronsemi
RoHS 1
PackagingTape & Reel (TR)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package SOT-223-3
Base Product Number FQT1N80
TechnologyMOSFET (Metal Oxide)
SeriesQFET®
Current - Continuous Drain (Id) @ 25°C 200mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs 20Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 7.2 nC @ 10 V
FET Feature-
Package / CaseTO-261-3
Vgs (Max)±30V
FET TypeN-Channel
Drain to Source Voltage (Vdss)800 V
Input Capacitance (Ciss) (Max) @ Vds 195 pF @ 25 V
Power Dissipation (Max) 2.1W (Tc)
Other NamesFQT1N80TF_WSTR-ND
FQT1N80TF_WSCT
FQT1N80TF-WSDKR
FQT1N80TF_WSDKR
FQT1N80TF_WSTR
FQT1N80TF-WSCT
FQT1N80TFWS
FQT1N80TF_WSDKR-ND
FQT1N80TF-WSTR
FQT1N80TF_WSCT-ND

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