G3R350MT12J

JavaScript seems to be disabled in your browser. For the best experience on our site, be sure to turn on Javascript in your browser.

SIC MOSFET N-CH 11A TO263-7

NOVA Part#:

312-2263417-G3R350MT12J

Manufacturer:

Manufacturer Part No:

G3R350MT12J

Standard Package:

Technical Datasheet:

N-Channel 1200 V 11A (Tc) 75W (Tc) Surface Mount TO-263-7

More Information
Category	Transistors - FETs, MOSFETs - Single
Manufacturer	GeneSiC Semiconductor
RoHS	1
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-263-7
Base Product Number	G3R350
Technology	SiCFET (Silicon Carbide)
Series	G3R™
Current - Continuous Drain (Id) @ 25°C	11A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	15V
Rds On (Max) @ Id, Vgs	420mOhm @ 4A, 15V
Vgs(th) (Max) @ Id	2.69V @ 2mA
Gate Charge (Qg) (Max) @ Vgs	12 nC @ 15 V
FET Feature	-
Package / Case	TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Vgs (Max)	±15V
FET Type	N-Channel
Drain to Source Voltage (Vdss)	1200 V
Input Capacitance (Ciss) (Max) @ Vds	334 pF @ 800 V
Power Dissipation (Max)	75W (Tc)
Other Names	1242-G3R350MT12J