IPB65R190C7ATMA2

More Information
Category	Transistors - FETs, MOSFETs - Single
Manufacturer	Infineon Technologies
RoHS	1
Packaging	Tape & Reel (TR)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TO263-3
Base Product Number	IPB65R190
Technology	MOSFET (Metal Oxide)
Series	CoolMOS™ C7
Current - Continuous Drain (Id) @ 25°C	13A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	190mOhm @ 5.7A, 10V
Vgs(th) (Max) @ Id	4V @ 290µA
Gate Charge (Qg) (Max) @ Vgs	23 nC @ 10 V
FET Feature	-
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs (Max)	±20V
FET Type	N-Channel
Drain to Source Voltage (Vdss)	650 V
Input Capacitance (Ciss) (Max) @ Vds	1150 pF @ 400 V
Power Dissipation (Max)	72W (Tc)
Other Names	IPB65R190C7ATMA2CT INFINFIPB65R190C7ATMA2 2156-IPB65R190C7ATMA2 IPB65R190C7ATMA2DKR IPB65R190C7ATMA2TR SP002447550