TSM120N06LCS RLG

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Category	Transistors - FETs, MOSFETs - Single
Manufacturer	Taiwan Semiconductor Corporation
RoHS	1
Packaging	Tape & Reel (TR)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-SOP
Base Product Number	TSM120
Technology	MOSFET (Metal Oxide)
Series	-
Current - Continuous Drain (Id) @ 25°C	23A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	12mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	37 nC @ 10 V
FET Feature	-
Package / Case	8-SOIC (0.154", 3.90mm Width)
Vgs (Max)	±20V
FET Type	N-Channel
Drain to Source Voltage (Vdss)	60 V
Input Capacitance (Ciss) (Max) @ Vds	2193 pF @ 30 V
Power Dissipation (Max)	12.5W (Tc)
Other Names	TSM120N06LCS RLGCT-ND TSM120N06LCSRLGCT TSM120N06LCSRLGDKR TSM120N06LCS RLGTR-ND TSM120N06LCSRLGTR TSM120N06LCS RLGDKR TSM120N06LCS RLGTR TSM120N06LCS RLGCT TSM120N06LCS RLGDKR-ND