SIHG80N60EF-GE3

MOSFET N-CH 600V 80A TO247AC
NOVA Part#:
312-2265409-SIHG80N60EF-GE3
Manufacturer:
Manufacturer Part No:
SIHG80N60EF-GE3
Standard Package:
500
Technical Datasheet:

N-Channel 600 V 80A (Tc) 520W (Tc) Through Hole TO-247AC

More Information
CategoryTransistors - FETs, MOSFETs - Single
ManufacturerVishay Siliconix
RoHS 1
Operating Temperature -55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device Package TO-247AC
Base Product Number SIHG80
TechnologyMOSFET (Metal Oxide)
SeriesEF
Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs 32mOhm @ 40A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 400 nC @ 10 V
FET Feature-
Package / CaseTO-247-3
Vgs (Max)±30V
FET TypeN-Channel
Drain to Source Voltage (Vdss)600 V
Input Capacitance (Ciss) (Max) @ Vds 6600 pF @ 100 V
Power Dissipation (Max) 520W (Tc)

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