IMBG120R030M1HXTMA1
SICFET N-CH 1.2KV 56A TO263
NOVA Part#:
312-2299892-IMBG120R030M1HXTMA1
Manufacturer:
Manufacturer Part No:
IMBG120R030M1HXTMA1
Standard Package:
1,000
Technical Datasheet:
N-Channel 1200 V 56A (Tc) 300W (Tc) Surface Mount PG-TO263-7-12
| Category | Transistors - FETs, MOSFETs - Single | |
| Manufacturer | Infineon Technologies | |
| RoHS | 1 | |
| Packaging | Tape & Reel (TR) | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | PG-TO263-7-12 | |
| Base Product Number | IMBG120 | |
| Technology | SiCFET (Silicon Carbide) | |
| Series | CoolSiC™ | |
| Current - Continuous Drain (Id) @ 25°C | 56A (Tc) | |
| Rds On (Max) @ Id, Vgs | 41mOhm @ 25A, 18V | |
| Vgs(th) (Max) @ Id | 5.7V @ 11.5mA | |
| Gate Charge (Qg) (Max) @ Vgs | 63 nC @ 18 V | |
| FET Feature | Standard | |
| Package / Case | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | |
| Vgs (Max) | +18V, -15V | |
| FET Type | N-Channel | |
| Drain to Source Voltage (Vdss) | 1200 V | |
| Input Capacitance (Ciss) (Max) @ Vds | 2290 pF @ 800 V | |
| Power Dissipation (Max) | 300W (Tc) | |
| Other Names | 448-IMBG120R030M1HXTMA1DKR 448-IMBG120R030M1HXTMA1CT 448-IMBG120R030M1HXTMA1TR SP004463784 |
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