IMW120R060M1HXKSA1

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SICFET N-CH 1.2KV 36A TO247-3

NOVA Part#:

312-2283898-IMW120R060M1HXKSA1

Manufacturer:

Manufacturer Part No:

IMW120R060M1HXKSA1

Standard Package:

Technical Datasheet:

N-Channel 1200 V 36A (Tc) 150W (Tc) Through Hole PG-TO247-3-41

More Information
Category	Transistors - FETs, MOSFETs - Single
Manufacturer	Infineon Technologies
RoHS	1
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PG-TO247-3-41
Base Product Number	IMW120
Technology	SiCFET (Silicon Carbide)
Series	CoolSiC™
Current - Continuous Drain (Id) @ 25°C	36A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	15V, 18V
Rds On (Max) @ Id, Vgs	78mOhm @ 13A, 18V
Vgs(th) (Max) @ Id	5.7V @ 5.6mA
Gate Charge (Qg) (Max) @ Vgs	31 nC @ 18 V
FET Feature	-
Package / Case	TO-247-3
Vgs (Max)	+23V, -7V
FET Type	N-Channel
Drain to Source Voltage (Vdss)	1200 V
Input Capacitance (Ciss) (Max) @ Vds	1060 pF @ 800 V
Power Dissipation (Max)	150W (Tc)
Other Names	SP001808368