NTD4979N-35G
MOSFET N-CH 30V 9.4A/41A IPAK
NOVA Part#:
312-2301908-NTD4979N-35G
Manufacturer:
Manufacturer Part No:
NTD4979N-35G
Standard Package:
75
Technical Datasheet:
N-Channel 30 V 9.4A (Ta), 41A (Tc) 1.38W (Ta), 26.3W (Tc) Through Hole I-PAK
| Category | Transistors - FETs, MOSFETs - Single | |
| Manufacturer | onsemi | |
| RoHS | 1 | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Mounting Type | Through Hole | |
| Supplier Device Package | I-PAK | |
| Base Product Number | NTD4979 | |
| Technology | MOSFET (Metal Oxide) | |
| Series | - | |
| Current - Continuous Drain (Id) @ 25°C | 9.4A (Ta), 41A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Rds On (Max) @ Id, Vgs | 9mOhm @ 30A, 10V | |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 16.5 nC @ 10 V | |
| FET Feature | - | |
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA | |
| Vgs (Max) | ±20V | |
| FET Type | N-Channel | |
| Drain to Source Voltage (Vdss) | 30 V | |
| Input Capacitance (Ciss) (Max) @ Vds | 837 pF @ 15 V | |
| Power Dissipation (Max) | 1.38W (Ta), 26.3W (Tc) | |
| Other Names | ONSONSNTD4979N-35G 2156-NTD4979N-35G-OS |
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