SUP90100E-GE3

N-CHANNEL 200 V (D-S) MOSFET TO-
NOVA Part#:
312-2298872-SUP90100E-GE3
Manufacturer:
Manufacturer Part No:
SUP90100E-GE3
Standard Package:
500
Technical Datasheet:

N-Channel 200 V 150A (Tc) 375W (Tc) Through Hole TO-220AB

More Information
CategoryTransistors - FETs, MOSFETs - Single
ManufacturerVishay Siliconix
RoHS 1
Operating Temperature -55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device Package TO-220AB
TechnologyMOSFET (Metal Oxide)
SeriesTrenchFET®
Current - Continuous Drain (Id) @ 25°C 150A (Tc)
Drive Voltage (Max Rds On, Min Rds On)7.5V, 10V
Rds On (Max) @ Id, Vgs 10.9mOhm @ 16A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 110 nC @ 10 V
FET Feature-
Package / CaseTO-220-3
Vgs (Max)±20V
FET TypeN-Channel
Drain to Source Voltage (Vdss)200 V
Input Capacitance (Ciss) (Max) @ Vds 3930 pF @ 100 V
Power Dissipation (Max) 375W (Tc)
Other Names742-SUP90100E-GE3

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