TK65G10N1,RQ
MOSFET N-CH 100V 65A D2PAK
NOVA Part#:
312-2303377-TK65G10N1,RQ
Manufacturer:
Manufacturer Part No:
TK65G10N1,RQ
Standard Package:
1,000
Technical Datasheet:
N-Channel 100 V 65A (Ta) 156W (Tc) Surface Mount D2PAK
| Category | Transistors - FETs, MOSFETs - Single | |
| Manufacturer | Toshiba Semiconductor and Storage | |
| RoHS | 1 | |
| Packaging | Tape & Reel (TR) | |
| Operating Temperature | 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | D2PAK | |
| Base Product Number | TK65G10 | |
| Technology | MOSFET (Metal Oxide) | |
| Series | U-MOSVIII-H | |
| Current - Continuous Drain (Id) @ 25°C | 65A (Ta) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Rds On (Max) @ Id, Vgs | 4.5mOhm @ 32.5A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 1mA | |
| Gate Charge (Qg) (Max) @ Vgs | 81 nC @ 10 V | |
| FET Feature | - | |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| Vgs (Max) | ±20V | |
| FET Type | N-Channel | |
| Drain to Source Voltage (Vdss) | 100 V | |
| Input Capacitance (Ciss) (Max) @ Vds | 5400 pF @ 50 V | |
| Power Dissipation (Max) | 156W (Tc) | |
| Other Names | TK65G10N1,RQ(S TK65G10N1RQCT TK65G10N1RQTR TK65G10N1RQDKR |
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