PSMN102-200Y,115
MOSFET N-CH 200V 21.5A LFPAK56
NOVA Part#:
312-2272570-PSMN102-200Y,115
Manufacturer:
Manufacturer Part No:
PSMN102-200Y,115
Standard Package:
1,500
Technical Datasheet:
N-Channel 200 V 21.5A (Tc) 113W (Tc) Surface Mount LFPAK56, Power-SO8
| Category | Transistors - FETs, MOSFETs - Single | |
| Manufacturer | Nexperia USA Inc. | |
| RoHS | 1 | |
| Packaging | Tape & Reel (TR) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | LFPAK56, Power-SO8 | |
| Base Product Number | PSMN102 | |
| Technology | MOSFET (Metal Oxide) | |
| Series | TrenchMOS™ | |
| Current - Continuous Drain (Id) @ 25°C | 21.5A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Rds On (Max) @ Id, Vgs | 102mOhm @ 12A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 1mA | |
| Gate Charge (Qg) (Max) @ Vgs | 30.7 nC @ 10 V | |
| FET Feature | - | |
| Package / Case | SC-100, SOT-669 | |
| Vgs (Max) | ±20V | |
| FET Type | N-Channel | |
| Drain to Source Voltage (Vdss) | 200 V | |
| Input Capacitance (Ciss) (Max) @ Vds | 1568 pF @ 30 V | |
| Power Dissipation (Max) | 113W (Tc) | |
| Other Names | 1727-5227-6 568-6544-2-ND 568-6544-1-ND 1727-5227-2 PSMN102-200Y T/R-ND 1727-5227-1 PSMN102200Y115 568-6544-6-ND PSMN102-200Y,115-ND 568-6544-6 PSMN102-200Y T/R 568-6544-2 568-6544-1 934061323115 |
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