TPN4R806PL,L1Q
MOSFET N-CH 60V 72A 8TSON
NOVA Part#:
312-2281987-TPN4R806PL,L1Q
Manufacturer:
Manufacturer Part No:
TPN4R806PL,L1Q
Standard Package:
5,000
Technical Datasheet:
N-Channel 60 V 72A (Tc) 630mW (Ta), 104W (Tc) Surface Mount 8-TSON Advance (3.1x3.1)
| Category | Transistors - FETs, MOSFETs - Single | |
| Manufacturer | Toshiba Semiconductor and Storage | |
| RoHS | 1 | |
| Packaging | Tape & Reel (TR) | |
| Operating Temperature | 175°C | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | 8-TSON Advance (3.1x3.1) | |
| Base Product Number | TPN4R806 | |
| Technology | MOSFET (Metal Oxide) | |
| Series | U-MOSIX-H | |
| Current - Continuous Drain (Id) @ 25°C | 72A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Rds On (Max) @ Id, Vgs | 3.5mOhm @ 36A, 10V | |
| Vgs(th) (Max) @ Id | 2.5V @ 300µA | |
| Gate Charge (Qg) (Max) @ Vgs | 29 nC @ 10 V | |
| FET Feature | - | |
| Package / Case | 8-PowerVDFN | |
| Vgs (Max) | ±20V | |
| FET Type | N-Channel | |
| Drain to Source Voltage (Vdss) | 60 V | |
| Input Capacitance (Ciss) (Max) @ Vds | 2770 pF @ 30 V | |
| Power Dissipation (Max) | 630mW (Ta), 104W (Tc) | |
| Other Names | 264-TPN4R806PLL1QTR 264-TPN4R806PLL1QCT 264-TPN4R806PLL1QDKR TPN4R806PL,L1Q(M |
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