SI2336DS-T1-BE3
MOSFET N-CH 30V 4.3A/5.2A SOT23
NOVA Part#:
312-2294128-SI2336DS-T1-BE3
Manufacturer:
Manufacturer Part No:
SI2336DS-T1-BE3
Standard Package:
3,000
Technical Datasheet:
N-Channel 30 V 4.3A (Ta), 5.2A (Tc) 1.25W (Ta), 1.8W (Tc) Surface Mount SOT-23-3 (TO-236)
| Category | Transistors - FETs, MOSFETs - Single | |
| Manufacturer | Vishay Siliconix | |
| RoHS | 1 | |
| Packaging | Tape & Reel (TR) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | SOT-23-3 (TO-236) | |
| Base Product Number | SI2336 | |
| Technology | MOSFET (Metal Oxide) | |
| Series | TrenchFET® | |
| Current - Continuous Drain (Id) @ 25°C | 4.3A (Ta), 5.2A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V | |
| Rds On (Max) @ Id, Vgs | 42mOhm @ 3.8A, 4.5V | |
| Vgs(th) (Max) @ Id | 1V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 8 V | |
| FET Feature | - | |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | |
| Vgs (Max) | ±8V | |
| FET Type | N-Channel | |
| Drain to Source Voltage (Vdss) | 30 V | |
| Input Capacitance (Ciss) (Max) @ Vds | 560 pF @ 15 V | |
| Power Dissipation (Max) | 1.25W (Ta), 1.8W (Tc) | |
| Other Names | 742-SI2336DS-T1-BE3DKR 742-SI2336DS-T1-BE3CT 742-SI2336DS-T1-BE3TR |
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