IPT026N10N5ATMA1
MOSFET N-CH 100V 27A/202A 8HSOF
NOVA Part#:
312-2298776-IPT026N10N5ATMA1
Manufacturer:
Manufacturer Part No:
IPT026N10N5ATMA1
Standard Package:
2,000
Technical Datasheet:
N-Channel 100 V 27A (Ta), 202A (Tc) 214W (Tc) Surface Mount PG-HSOF-8-1
| Category | Transistors - FETs, MOSFETs - Single | |
| Manufacturer | Infineon Technologies | |
| RoHS | 1 | |
| Packaging | Tape & Reel (TR) | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | PG-HSOF-8-1 | |
| Base Product Number | IPT026 | |
| Technology | MOSFET (Metal Oxide) | |
| Series | OptiMOS™5 | |
| Current - Continuous Drain (Id) @ 25°C | 27A (Ta), 202A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V | |
| Rds On (Max) @ Id, Vgs | 2.6mOhm @ 150A, 10V | |
| Vgs(th) (Max) @ Id | 3.8V @ 158µA | |
| Gate Charge (Qg) (Max) @ Vgs | 120 nC @ 10 V | |
| FET Feature | - | |
| Package / Case | 8-PowerSFN | |
| Vgs (Max) | ±20V | |
| FET Type | N-Channel | |
| Drain to Source Voltage (Vdss) | 100 V | |
| Input Capacitance (Ciss) (Max) @ Vds | 8800 pF @ 50 V | |
| Power Dissipation (Max) | 214W (Tc) | |
| Other Names | 448-IPT026N10N5ATMA1DKR 448-IPT026N10N5ATMA1TR SP003883420 448-IPT026N10N5ATMA1CT |
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