SI1050X-T1-GE3
MOSFET N-CH 8V 1.34A SC89-6
NOVA Part#:
312-2263398-SI1050X-T1-GE3
Manufacturer:
Manufacturer Part No:
SI1050X-T1-GE3
Standard Package:
3,000
Technical Datasheet:
N-Channel 8 V 1.34A (Ta) 236mW (Ta) Surface Mount SC-89 (SOT-563F)
| Category | Transistors - FETs, MOSFETs - Single | |
| Manufacturer | Vishay Siliconix | |
| RoHS | 1 | |
| Packaging | Tape & Reel (TR) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | SC-89 (SOT-563F) | |
| Base Product Number | SI1050 | |
| Technology | MOSFET (Metal Oxide) | |
| Series | TrenchFET® | |
| Current - Continuous Drain (Id) @ 25°C | 1.34A (Ta) | |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V | |
| Rds On (Max) @ Id, Vgs | 86mOhm @ 1.34A, 4.5V | |
| Vgs(th) (Max) @ Id | 900mV @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 11.6 nC @ 5 V | |
| FET Feature | - | |
| Package / Case | SOT-563, SOT-666 | |
| Vgs (Max) | ±5V | |
| FET Type | N-Channel | |
| Drain to Source Voltage (Vdss) | 8 V | |
| Input Capacitance (Ciss) (Max) @ Vds | 585 pF @ 4 V | |
| Power Dissipation (Max) | 236mW (Ta) | |
| Other Names | SI1050X-T1-GE3DKR SI1050X-T1-GE3CT SI1050XT1GE3 SI1050X-T1-GE3TR |
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