SIS410DN-T1-GE3
MOSFET N-CH 20V 35A PPAK 1212-8
NOVA Part#:
312-2280357-SIS410DN-T1-GE3
Manufacturer:
Manufacturer Part No:
SIS410DN-T1-GE3
Standard Package:
3,000
Technical Datasheet:
N-Channel 20 V 35A (Tc) 3.8W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8
| Category | Transistors - FETs, MOSFETs - Single | |
| Manufacturer | Vishay Siliconix | |
| RoHS | 1 | |
| Packaging | Tape & Reel (TR) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | PowerPAK® 1212-8 | |
| Base Product Number | SIS410 | |
| Technology | MOSFET (Metal Oxide) | |
| Series | TrenchFET® | |
| Current - Continuous Drain (Id) @ 25°C | 35A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Rds On (Max) @ Id, Vgs | 4.8mOhm @ 20A, 10V | |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 41 nC @ 10 V | |
| FET Feature | - | |
| Package / Case | PowerPAK® 1212-8 | |
| Vgs (Max) | ±20V | |
| FET Type | N-Channel | |
| Drain to Source Voltage (Vdss) | 20 V | |
| Input Capacitance (Ciss) (Max) @ Vds | 1600 pF @ 10 V | |
| Power Dissipation (Max) | 3.8W (Ta), 52W (Tc) | |
| Other Names | SIS410DN-T1-GE3DKR SIS410DN-T1-GE3-ND SIS410DNT1GE3 SIS410DN-T1-GE3TR SIS410DN-T1-GE3CT |
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