TSM4ND65CI
MOSFET N-CH 650V 4A ITO220
NOVA Part#:
312-2264279-TSM4ND65CI
Manufacturer:
Manufacturer Part No:
TSM4ND65CI
Standard Package:
50
Technical Datasheet:
N-Channel 650 V 4A (Tc) 41.6W (Tc) Through Hole ITO-220
| Category | Transistors - FETs, MOSFETs - Single | |
| Manufacturer | Taiwan Semiconductor Corporation | |
| RoHS | 1 | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Supplier Device Package | ITO-220 | |
| Base Product Number | TSM4 | |
| Technology | MOSFET (Metal Oxide) | |
| Series | - | |
| Current - Continuous Drain (Id) @ 25°C | 4A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Rds On (Max) @ Id, Vgs | 2.6Ohm @ 1.2A, 10V | |
| Vgs(th) (Max) @ Id | 3.8V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 16.8 nC @ 10 V | |
| FET Feature | - | |
| Package / Case | TO-220-3 Full Pack, Isolated Tab | |
| Vgs (Max) | ±30V | |
| FET Type | N-Channel | |
| Drain to Source Voltage (Vdss) | 650 V | |
| Input Capacitance (Ciss) (Max) @ Vds | 596 pF @ 50 V | |
| Power Dissipation (Max) | 41.6W (Tc) | |
| Other Names | 1801-TSM4ND65CI TSM4ND65CI-ND TSM4ND65CI RLG TSM4ND65CI C0G |
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