NP100P06PDG-E1-AY

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Category	Transistors - FETs, MOSFETs - Single
Manufacturer	Renesas Electronics America Inc
RoHS	1
Packaging	Tape & Reel (TR)
Operating Temperature	175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-263
Base Product Number	NP100P06
Technology	MOSFET (Metal Oxide)
Series	-
Current - Continuous Drain (Id) @ 25°C	100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	6mOhm @ 50A, 10V
Vgs(th) (Max) @ Id	2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	300 nC @ 10 V
FET Feature	-
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs (Max)	±20V
FET Type	P-Channel
Drain to Source Voltage (Vdss)	60 V
Input Capacitance (Ciss) (Max) @ Vds	15000 pF @ 10 V
Power Dissipation (Max)	1.8W (Ta), 200W (Tc)
Other Names	NP100P06PDG-E1-AY-ND 559-NP100P06PDG-E1-AYCT -1161-NP100P06PDG-E1-AYCT 559-NP100P06PDG-E1-AYTR 559-NP100P06PDG-E1-AYDKR

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