IPD600N25N3GATMA1
MOSFET N-CH 250V 25A TO252-3
NOVA Part#:
312-2283025-IPD600N25N3GATMA1
Manufacturer:
Manufacturer Part No:
IPD600N25N3GATMA1
Standard Package:
2,500
Technical Datasheet:
N-Channel 250 V 25A (Tc) 136W (Tc) Surface Mount PG-TO252-3
| Category | Transistors - FETs, MOSFETs - Single | |
| Manufacturer | Infineon Technologies | |
| RoHS | 1 | |
| Packaging | Tape & Reel (TR) | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | PG-TO252-3 | |
| Base Product Number | IPD600 | |
| Technology | MOSFET (Metal Oxide) | |
| Series | OptiMOS™ | |
| Current - Continuous Drain (Id) @ 25°C | 25A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 25A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 90µA | |
| Gate Charge (Qg) (Max) @ Vgs | 29 nC @ 10 V | |
| FET Feature | - | |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| Vgs (Max) | ±20V | |
| FET Type | N-Channel | |
| Drain to Source Voltage (Vdss) | 250 V | |
| Input Capacitance (Ciss) (Max) @ Vds | 2350 pF @ 100 V | |
| Power Dissipation (Max) | 136W (Tc) | |
| Other Names | IPD600N25N3GATMA1TR IPD600N25N3GATMA1DKR SP001127834 IPD600N25N3GATMA1CT |
In stock Please contact us
Not the price you want? Fill the forms and we'll contact you ASAP.
We found other products you might like!
SQD10950E_GE3Vishay Siliconix
MJD44H11T4Gonsemi
IPT015N10N5ATMA1Infineon Technologies
SZ1SMA5918BT3Gonsemi
IPD320N20N3GATMA1Infineon Technologies
FDP045N10A-F102onsemi
INA180A1IDBVRTexas Instruments
1N4148W-7-FDiodes Incorporated
