SI4435DDY-T1-GE3
MOSFET P-CH 30V 11.4A 8SO
NOVA Part#:
312-2281294-SI4435DDY-T1-GE3
Manufacturer:
Manufacturer Part No:
SI4435DDY-T1-GE3
Standard Package:
2,500
Technical Datasheet:
P-Channel 30 V 11.4A (Tc) 2.5W (Ta), 5W (Tc) Surface Mount 8-SOIC
| Category | Transistors - FETs, MOSFETs - Single | |
| Manufacturer | Vishay Siliconix | |
| RoHS | 1 | |
| Packaging | Tape & Reel (TR) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | 8-SOIC | |
| Base Product Number | SI4435 | |
| Technology | MOSFET (Metal Oxide) | |
| Series | TrenchFET® | |
| Current - Continuous Drain (Id) @ 25°C | 11.4A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Rds On (Max) @ Id, Vgs | 24mOhm @ 9.1A, 10V | |
| Vgs(th) (Max) @ Id | 3V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 50 nC @ 10 V | |
| FET Feature | - | |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) | |
| Vgs (Max) | ±20V | |
| FET Type | P-Channel | |
| Drain to Source Voltage (Vdss) | 30 V | |
| Input Capacitance (Ciss) (Max) @ Vds | 1350 pF @ 15 V | |
| Power Dissipation (Max) | 2.5W (Ta), 5W (Tc) | |
| Other Names | SI4435DDY-T1-GE3CT SI4435DDY-T1-GE3TR SI4435DDYT1GE3 SI4435DDY-T1-GE3DKR |
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