SI3410DV-T1-GE3
MOSFET N-CH 30V 8A 6TSOP
NOVA Part#:
312-2282024-SI3410DV-T1-GE3
Manufacturer:
Manufacturer Part No:
SI3410DV-T1-GE3
Standard Package:
3,000
Technical Datasheet:
N-Channel 30 V 8A (Tc) 2W (Ta), 4.1W (Tc) Surface Mount 6-TSOP
| Category | Transistors - FETs, MOSFETs - Single | |
| Manufacturer | Vishay Siliconix | |
| RoHS | 1 | |
| Packaging | Tape & Reel (TR) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | 6-TSOP | |
| Base Product Number | SI3410 | |
| Technology | MOSFET (Metal Oxide) | |
| Series | TrenchFET® | |
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Rds On (Max) @ Id, Vgs | 19.5mOhm @ 5A, 10V | |
| Vgs(th) (Max) @ Id | 3V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 33 nC @ 10 V | |
| FET Feature | - | |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 | |
| Vgs (Max) | ±20V | |
| FET Type | N-Channel | |
| Drain to Source Voltage (Vdss) | 30 V | |
| Input Capacitance (Ciss) (Max) @ Vds | 1295 pF @ 15 V | |
| Power Dissipation (Max) | 2W (Ta), 4.1W (Tc) | |
| Other Names | SI3410DV-T1-GE3CT SI3410DV-T1-GE3TR SI3410DV-T1-GE3DKR SI3410DVT1GE3 |
In stock Please contact us
Not the price you want? Fill the forms and we'll contact you ASAP.
We found other products you might like!
IRL3803PBFInfineon Technologies
FDS6975onsemi
DG409DYZRenesas Electronics America Inc
MMBT3904LT1Gonsemi
LT5400AHMS8E-3#PBFAnalog Devices Inc.
LT1007IS8#PBFAnalog Devices Inc.
2N7002NTE Electronics, Inc
LTC1052CSW#PBFAnalog Devices Inc.
SI3424BDV-T1-GE3Vishay Siliconix
5-1462039-6TE Connectivity Potter & Brumfield Relays
FDC658APonsemi
