TK9J90E,S1E

MOSFET N-CH 900V 9A TO3P
NOVA Part#:
312-2289058-TK9J90E,S1E
Manufacturer Part No:
TK9J90E,S1E
Standard Package:
25
Technical Datasheet:

N-Channel 900 V 9A (Ta) 250W (Tc) Through Hole TO-3P(N)

More Information
CategoryTransistors - FETs, MOSFETs - Single
ManufacturerToshiba Semiconductor and Storage
RoHS 1
Operating Temperature 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device Package TO-3P(N)
Base Product Number TK9J90
TechnologyMOSFET (Metal Oxide)
Series-
Current - Continuous Drain (Id) @ 25°C 9A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs 1.3Ohm @ 4.5A, 10V
Vgs(th) (Max) @ Id 4V @ 900µA
Gate Charge (Qg) (Max) @ Vgs 46 nC @ 10 V
FET Feature-
Package / CaseTO-3P-3, SC-65-3
Vgs (Max)±30V
FET TypeN-Channel
Drain to Source Voltage (Vdss)900 V
Input Capacitance (Ciss) (Max) @ Vds 2000 pF @ 25 V
Power Dissipation (Max) 250W (Tc)
Other NamesTK9J90E,S1E(S
TK9J90ES1E

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