SIHP35N60EF-GE3

MOSFET N-CH 600V 32A TO220AB
NOVA Part#:
312-2265356-SIHP35N60EF-GE3
Manufacturer:
Manufacturer Part No:
SIHP35N60EF-GE3
Standard Package:
1,000
Technical Datasheet:

N-Channel 600 V 32A (Tc) 250W (Tc) Through Hole TO-220AB

More Information
CategoryTransistors - FETs, MOSFETs - Single
ManufacturerVishay Siliconix
RoHS 1
Operating Temperature -55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device Package TO-220AB
Base Product Number SIHP35
TechnologyMOSFET (Metal Oxide)
SeriesEF
Current - Continuous Drain (Id) @ 25°C 32A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs 97mOhm @ 17A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 134 nC @ 10 V
FET Feature-
Package / CaseTO-220-3
Vgs (Max)±30V
FET TypeN-Channel
Drain to Source Voltage (Vdss)600 V
Input Capacitance (Ciss) (Max) @ Vds 2568 pF @ 100 V
Power Dissipation (Max) 250W (Tc)
Other NamesSIHP35N60EF-GE3DKR-ND
SIHP35N60EF-GE3DKRINACTIVE
SIHP35N60EF-GE3TR
SIHP35N60EF-GE3CT
SIHP35N60EF-GE3TR-ND
SIHP35N60EF-GE3TRINACTIVE
SIHP35N60EF-GE3DKR
SIHP35N60EF-GE3CT-ND

In stock Please contact us

Not the price you want? Fill the forms and we'll contact you ASAP.