FQT1N60CTF-WS

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MOSFET N-CH 600V 200MA SOT223-4

NOVA Part#:

312-2281148-FQT1N60CTF-WS

Manufacturer:

Manufacturer Part No:

FQT1N60CTF-WS

Standard Package:

4,000

Technical Datasheet:

N-Channel 600 V 200mA (Tc) 2.1W (Tc) Surface Mount SOT-223-4

More Information
Category	Transistors - FETs, MOSFETs - Single
Manufacturer	onsemi
RoHS	1
Packaging	Tape & Reel (TR)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-223-4
Base Product Number	FQT1N60
Technology	MOSFET (Metal Oxide)
Series	QFET®
Current - Continuous Drain (Id) @ 25°C	200mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	11.5Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	6.2 nC @ 10 V
FET Feature	-
Package / Case	TO-261-4, TO-261AA
Vgs (Max)	±30V
FET Type	N-Channel
Drain to Source Voltage (Vdss)	600 V
Input Capacitance (Ciss) (Max) @ Vds	170 pF @ 25 V
Power Dissipation (Max)	2.1W (Tc)
Other Names	FQT1N60CTF-WSDKR FQT1N60CTF_WSDKR-ND FQT1N60CTF_WSTR FQT1N60CTF-WSCT FQT1N60CTF_WS FQT1N60CTF_WSCT-ND FQT1N60CTF_WSTR-ND FQT1N60CTF_WSCT FQT1N60CTF-WSTR FQT1N60CTFWS FQT1N60CTF_WSDKR