RQ3E100ATTB
MOSFET P-CH 30V 10A/31A 8HSMT
NOVA Part#:
312-2287789-RQ3E100ATTB
Manufacturer:
Manufacturer Part No:
RQ3E100ATTB
Standard Package:
3,000
Technical Datasheet:
P-Channel 30 V 10A (Ta), 31A (Tc) 2W (Ta) Surface Mount 8-HSMT (3.2x3)
| Category | Transistors - FETs, MOSFETs - Single | |
| Manufacturer | Rohm Semiconductor | |
| RoHS | 1 | |
| Packaging | Tape & Reel (TR) | |
| Operating Temperature | 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | 8-HSMT (3.2x3) | |
| Base Product Number | RQ3E100 | |
| Technology | MOSFET (Metal Oxide) | |
| Series | - | |
| Current - Continuous Drain (Id) @ 25°C | 10A (Ta), 31A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Rds On (Max) @ Id, Vgs | 11.4mOhm @ 10A, 10V | |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA | |
| Gate Charge (Qg) (Max) @ Vgs | 42 nC @ 10 V | |
| FET Feature | - | |
| Package / Case | 8-PowerVDFN | |
| Vgs (Max) | ±20V | |
| FET Type | P-Channel | |
| Drain to Source Voltage (Vdss) | 30 V | |
| Input Capacitance (Ciss) (Max) @ Vds | 1900 pF @ 15 V | |
| Power Dissipation (Max) | 2W (Ta) | |
| Other Names | RQ3E100ATTBDKR RQ3E100ATTBCT RQ3E100ATTBTR |
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