SI2312CDS-T1-GE3
MOSFET N-CH 20V 6A SOT23-3
NOVA Part#:
312-2282589-SI2312CDS-T1-GE3
Manufacturer:
Manufacturer Part No:
SI2312CDS-T1-GE3
Standard Package:
3,000
Technical Datasheet:
N-Channel 20 V 6A (Tc) 1.25W (Ta), 2.1W (Tc) Surface Mount SOT-23-3 (TO-236)
| Category | Transistors - FETs, MOSFETs - Single | |
| Manufacturer | Vishay Siliconix | |
| RoHS | 1 | |
| Packaging | Tape & Reel (TR) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | SOT-23-3 (TO-236) | |
| Base Product Number | SI2312 | |
| Technology | MOSFET (Metal Oxide) | |
| Series | TrenchFET® | |
| Current - Continuous Drain (Id) @ 25°C | 6A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V | |
| Rds On (Max) @ Id, Vgs | 31.8mOhm @ 5A, 4.5V | |
| Vgs(th) (Max) @ Id | 1V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 5 V | |
| FET Feature | - | |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | |
| Vgs (Max) | ±8V | |
| FET Type | N-Channel | |
| Drain to Source Voltage (Vdss) | 20 V | |
| Input Capacitance (Ciss) (Max) @ Vds | 865 pF @ 10 V | |
| Power Dissipation (Max) | 1.25W (Ta), 2.1W (Tc) | |
| Other Names | SI2312CDS-T1-GE3TR SI2312CDS-T1-GE3DKR SI2312CDST1GE3 SI2312CDS-T1-GE3CT |
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