SI4463CDY-T1-GE3
MOSFET P-CH 20V 13.6A/49A 8SO
NOVA Part#:
312-2282426-SI4463CDY-T1-GE3
Manufacturer:
Manufacturer Part No:
SI4463CDY-T1-GE3
Standard Package:
2,500
Technical Datasheet:
P-Channel 20 V 13.6A (Ta), 49A (Tc) 2.7W (Ta), 5W (Tc) Surface Mount 8-SOIC
| Category | Transistors - FETs, MOSFETs - Single | |
| Manufacturer | Vishay Siliconix | |
| RoHS | 1 | |
| Packaging | Tape & Reel (TR) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | 8-SOIC | |
| Base Product Number | SI4463 | |
| Technology | MOSFET (Metal Oxide) | |
| Series | TrenchFET® | |
| Current - Continuous Drain (Id) @ 25°C | 13.6A (Ta), 49A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 10V | |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 13A, 10V | |
| Vgs(th) (Max) @ Id | 1.4V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 162 nC @ 10 V | |
| FET Feature | - | |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) | |
| Vgs (Max) | ±12V | |
| FET Type | P-Channel | |
| Drain to Source Voltage (Vdss) | 20 V | |
| Input Capacitance (Ciss) (Max) @ Vds | 4250 pF @ 15 V | |
| Power Dissipation (Max) | 2.7W (Ta), 5W (Tc) | |
| Other Names | SI4463CDY-T1-GE3DKR SI4463CDY-T1-GE3CT SI4463CDY-T1-GE3TR |
In stock Please contact us
Not the price you want? Fill the forms and we'll contact you ASAP.
We found other products you might like!
BZG03C56-M3-08Vishay General Semiconductor - Diodes Division
SI4467DYFairchild Semiconductor
FDS4465onsemi- SI4425DYFairchild Semiconductor
SS8050-GComchip Technology
SI4435FDY-T1-GE3Vishay Siliconix
SI7997DP-T1-GE3Vishay Siliconix- SI4128DY-T1-E3Vishay Siliconix
BSV52,215Nexperia USA Inc.
AO4425Alpha & Omega Semiconductor Inc.
IRF7425TRPBFInfineon Technologies
