ISC027N10NM6ATMA1
TRENCH >=100V PG-TDSON-8
NOVA Part#:
312-2277782-ISC027N10NM6ATMA1
Manufacturer:
Manufacturer Part No:
ISC027N10NM6ATMA1
Standard Package:
5,000
Technical Datasheet:
N-Channel 100 V 23A (Ta), 192A (Tc) 3W (Ta), 217W (Tc) Surface Mount PG-TDSON-8 FL
| Category | Transistors - FETs, MOSFETs - Single | |
| Manufacturer | Infineon Technologies | |
| RoHS | 1 | |
| Packaging | Tape & Reel (TR) | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | PG-TDSON-8 FL | |
| Technology | MOSFET (Metal Oxide) | |
| Series | OptiMOS™ | |
| Current - Continuous Drain (Id) @ 25°C | 23A (Ta), 192A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 8V, 10V | |
| Rds On (Max) @ Id, Vgs | 2.7mOhm @ 50A, 10V | |
| Vgs(th) (Max) @ Id | 3.3V @ 116µA | |
| Gate Charge (Qg) (Max) @ Vgs | 72.5 nC @ 10 V | |
| FET Feature | - | |
| Package / Case | 8-PowerTDFN | |
| Vgs (Max) | ±20V | |
| FET Type | N-Channel | |
| Drain to Source Voltage (Vdss) | 100 V | |
| Input Capacitance (Ciss) (Max) @ Vds | 5500 pF @ 50 V | |
| Power Dissipation (Max) | 3W (Ta), 217W (Tc) | |
| Other Names | 448-ISC027N10NM6ATMA1CT 448-ISC027N10NM6ATMA1DKR SP005339566 448-ISC027N10NM6ATMA1TR |
In stock Please contact us
Not the price you want? Fill the forms and we'll contact you ASAP.
We found other products you might like!
- ISC022N10NM6ATMA1Infineon Technologies
- ISC080N10NM6ATMA1Infineon Technologies
- BSC027N10NS5ATMA1Infineon Technologies
- SIJH112E-T1-GE3Vishay Siliconix
- FDMS86350onsemi
- IPT020N10N5ATMA1Infineon Technologies
- ISC060N10NM6ATMA1Infineon Technologies
- ISZ080N10NM6ATMA1Infineon Technologies
- NTMFS3D6N10MCLT1Gonsemi
- ISC030N10NM6ATMA1Infineon Technologies
- DI100N10PQDiotec Semiconductor
- BSC0802LSATMA1Infineon Technologies












