FQD4N20TM
MOSFET N-CH 200V 3A DPAK
NOVA Part#:
312-2273565-FQD4N20TM
Manufacturer:
Manufacturer Part No:
FQD4N20TM
Standard Package:
2,500
Technical Datasheet:
N-Channel 200 V 3A (Tc) 2.5W (Ta), 30W (Tc) Surface Mount TO-252AA
| Category | Transistors - FETs, MOSFETs - Single | |
| Manufacturer | onsemi | |
| RoHS | 1 | |
| Packaging | Tape & Reel (TR) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | TO-252AA | |
| Base Product Number | FQD4N20 | |
| Technology | MOSFET (Metal Oxide) | |
| Series | QFET® | |
| Current - Continuous Drain (Id) @ 25°C | 3A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Rds On (Max) @ Id, Vgs | 1.4Ohm @ 1.5A, 10V | |
| Vgs(th) (Max) @ Id | 5V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 6.5 nC @ 10 V | |
| FET Feature | - | |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| Vgs (Max) | ±30V | |
| FET Type | N-Channel | |
| Drain to Source Voltage (Vdss) | 200 V | |
| Input Capacitance (Ciss) (Max) @ Vds | 220 pF @ 25 V | |
| Power Dissipation (Max) | 2.5W (Ta), 30W (Tc) | |
| Other Names | FQD4N20TMFSCT FQD4N20TMFSDKR FQD4N20TMFSTR FQD4N20TM-ND |
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