SCT3160KLGC11

More Information
Category	Transistors - FETs, MOSFETs - Single
Manufacturer	Rohm Semiconductor
RoHS	1
Operating Temperature	175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-247N
Base Product Number	SCT3160
Technology	SiCFET (Silicon Carbide)
Series	-
Current - Continuous Drain (Id) @ 25°C	17A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	18V
Rds On (Max) @ Id, Vgs	208mOhm @ 5A, 18V
Vgs(th) (Max) @ Id	5.6V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs	42 nC @ 18 V
FET Feature	-
Package / Case	TO-247-3
Vgs (Max)	+22V, -4V
FET Type	N-Channel
Drain to Source Voltage (Vdss)	1200 V
Input Capacitance (Ciss) (Max) @ Vds	398 pF @ 800 V
Power Dissipation (Max)	103W (Tc)

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