SIR580DP-T1-RE3

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Category	Transistors - FETs, MOSFETs - Single
Manufacturer	Vishay Siliconix
RoHS	1
Packaging	Tape & Reel (TR)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Technology	MOSFET (Metal Oxide)
Series	TrenchFET® Gen V
Current - Continuous Drain (Id) @ 25°C	35.8A (Ta), 146A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	7.5V, 10V
Rds On (Max) @ Id, Vgs	2.7mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	76 nC @ 10 V
FET Feature	-
Package / Case	PowerPAK® SO-8
Vgs (Max)	±20V
FET Type	N-Channel
Drain to Source Voltage (Vdss)	80 V
Input Capacitance (Ciss) (Max) @ Vds	4100 pF @ 40 V
Power Dissipation (Max)	6.25W (Ta), 104W (Tc)
Other Names	742-SIR580DP-T1-RE3CT 742-SIR580DP-T1-RE3TR 742-SIR580DP-T1-RE3DKR

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