SI7129DN-T1-GE3
MOSFET P-CH 30V 35A PPAK1212-8
NOVA Part#:
312-2285620-SI7129DN-T1-GE3
Manufacturer:
Manufacturer Part No:
SI7129DN-T1-GE3
Standard Package:
3,000
Technical Datasheet:
P-Channel 30 V 35A (Tc) 3.8W (Ta), 52.1W (Tc) Surface Mount PowerPAK® 1212-8
| Category | Transistors - FETs, MOSFETs - Single | |
| Manufacturer | Vishay Siliconix | |
| RoHS | 1 | |
| Packaging | Tape & Reel (TR) | |
| Operating Temperature | -50°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | PowerPAK® 1212-8 | |
| Base Product Number | SI7129 | |
| Technology | MOSFET (Metal Oxide) | |
| Series | TrenchFET® | |
| Current - Continuous Drain (Id) @ 25°C | 35A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Rds On (Max) @ Id, Vgs | 11.4mOhm @ 14.4A, 10V | |
| Vgs(th) (Max) @ Id | 2.8V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 71 nC @ 10 V | |
| FET Feature | - | |
| Package / Case | PowerPAK® 1212-8 | |
| Vgs (Max) | ±20V | |
| FET Type | P-Channel | |
| Drain to Source Voltage (Vdss) | 30 V | |
| Input Capacitance (Ciss) (Max) @ Vds | 3345 pF @ 15 V | |
| Power Dissipation (Max) | 3.8W (Ta), 52.1W (Tc) | |
| Other Names | SI7129DN-T1-GE3DKR SI7129DN-T1-GE3CT SI7129DN-T1-GE3-ND SI7129DN-T1-GE3TR SI7129DNT1GE3 |
In stock Need more?
$0.39940
Not the price you want? Fill the forms and we'll contact you ASAP.
We found other products you might like!
- NCP308SNADJT1Gonsemi
- NTJD1155LT1Gonsemi
- STUSB4500QTRSTMicroelectronics
- SI7121DN-T1-GE3Vishay Siliconix
- NDC7001Consemi
- SI7143DP-T1-GE3Vishay Siliconix
- NCP380HSN05AAT1Gonsemi
- NLAS3158MNR2Gonsemi
- NCP303LSN25T1Gonsemi
- NTZD3155CT2Gonsemi
- FDC6333Consemi
- NTZD3155CT1Gonsemi
- NCV303LSN30T1Gonsemi
- BSZ120P03NS3GATMA1Infineon Technologies









