IRF3205LPBF

JavaScript seems to be disabled in your browser. For the best experience on our site, be sure to turn on Javascript in your browser.

MOSFET N-CH 55V 110A TO262

NOVA Part#:

312-2263674-IRF3205LPBF

Manufacturer:

Manufacturer Part No:

IRF3205LPBF

Standard Package:

Technical Datasheet:

N-Channel 55 V 110A (Tc) 200W (Tc) Through Hole TO-262

More Information
Category	Transistors - FETs, MOSFETs - Single
Manufacturer	Infineon Technologies
RoHS	1
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-262
Base Product Number	IRF3205
Technology	MOSFET (Metal Oxide)
Series	HEXFET®
Current - Continuous Drain (Id) @ 25°C	110A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	8mOhm @ 62A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	146 nC @ 10 V
FET Feature	-
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA
Vgs (Max)	±20V
FET Type	N-Channel
Drain to Source Voltage (Vdss)	55 V
Input Capacitance (Ciss) (Max) @ Vds	3247 pF @ 25 V
Power Dissipation (Max)	200W (Tc)
Other Names	SP001564458 *IRF3205LPBF