BSC100N10NSFGATMA1
MOSFET N-CH 100V 11.4/90A 8TDSON
NOVA Part#:
312-2282428-BSC100N10NSFGATMA1
Manufacturer:
Manufacturer Part No:
BSC100N10NSFGATMA1
Standard Package:
5,000
Technical Datasheet:
N-Channel 100 V 11.4A (Ta), 90A (Tc) 156W (Tc) Surface Mount PG-TDSON-8-1
| Category | Transistors - FETs, MOSFETs - Single | |
| Manufacturer | Infineon Technologies | |
| RoHS | 1 | |
| Packaging | Tape & Reel (TR) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | PG-TDSON-8-1 | |
| Base Product Number | BSC100 | |
| Technology | MOSFET (Metal Oxide) | |
| Series | OptiMOS™ | |
| Current - Continuous Drain (Id) @ 25°C | 11.4A (Ta), 90A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Rds On (Max) @ Id, Vgs | 10mOhm @ 25A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 110µA | |
| Gate Charge (Qg) (Max) @ Vgs | 44 nC @ 10 V | |
| FET Feature | - | |
| Package / Case | 8-PowerTDFN | |
| Vgs (Max) | ±20V | |
| FET Type | N-Channel | |
| Drain to Source Voltage (Vdss) | 100 V | |
| Input Capacitance (Ciss) (Max) @ Vds | 2900 pF @ 50 V | |
| Power Dissipation (Max) | 156W (Tc) | |
| Other Names | 2156-BSC100N10NSFGATMA1 BSC100N10NSF G-ND BSC100N10NSFGATMA1DKR BSC100N10NSF GTR BSC100N10NSFGATMA1CT BSC100N10NSF GDKR BSC100N10NSF GTR-ND BSC100N10NSF GDKR-ND BSC100N10NSF GCT-ND BSC100N10NSF G SP000379595 BSC100N10NSFG BSC100N10NSFGATMA1TR BSC100N10NSF GCT IFEINFBSC100N10NSFGATMA1 |
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