SQJQ410EL-T1_GE3
MOSFET N-CH 100V 135A PPAK 8 X 8
NOVA Part#:
312-2279731-SQJQ410EL-T1_GE3
Manufacturer:
Manufacturer Part No:
SQJQ410EL-T1_GE3
Standard Package:
2,000
Technical Datasheet:
N-Channel 100 V 135A (Tc) 136W (Tc) Surface Mount PowerPAK® 8 x 8
| Category | Transistors - FETs, MOSFETs - Single | |
| Manufacturer | Vishay Siliconix | |
| RoHS | 1 | |
| Packaging | Tape & Reel (TR) | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | PowerPAK® 8 x 8 | |
| Base Product Number | SQJQ410 | |
| Technology | MOSFET (Metal Oxide) | |
| Series | Automotive, AEC-Q101, TrenchFET® | |
| Current - Continuous Drain (Id) @ 25°C | 135A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Rds On (Max) @ Id, Vgs | 3.4mOhm @ 20A, 10V | |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 150 nC @ 10 V | |
| FET Feature | - | |
| Package / Case | PowerPAK® 8 x 8 | |
| Vgs (Max) | ±20V | |
| FET Type | N-Channel | |
| Drain to Source Voltage (Vdss) | 100 V | |
| Input Capacitance (Ciss) (Max) @ Vds | 7350 pF @ 25 V | |
| Power Dissipation (Max) | 136W (Tc) | |
| Other Names | SQJQ410EL-T1_GE3CT SQJQ410EL-T1_GE3DKR SQJQ410EL-T1_GE3TR |
In stock Please contact us
Not the price you want? Fill the forms and we'll contact you ASAP.
We found other products you might like!
TPH2R306NH1,LQToshiba Semiconductor and Storage
SIDR870ADP-T1-GE3Vishay Siliconix
SQJQ480E-T1_GE3Vishay Siliconix
SIJH112E-T1-GE3Vishay Siliconix
SQJ409EP-T1_GE3Vishay Siliconix
FDWS86068-F085onsemi
SQJQ144AE-T1_GE3Vishay Siliconix
SIDR626LDP-T1-RE3Vishay Siliconix
SQJQ112E-T1_GE3Vishay Siliconix
J115F21CH12VDCS61.5UCIT Relay and Switch- BSC0802LSATMA1Infineon Technologies
IAUC100N10S5N040ATMA1Infineon Technologies- SQJQ466E-T1_GE3Vishay Siliconix
