IPB083N10N3GATMA1
MOSFET N-CH 100V 80A D2PAK
NOVA Part#:
312-2282803-IPB083N10N3GATMA1
Manufacturer:
Manufacturer Part No:
IPB083N10N3GATMA1
Standard Package:
1,000
Technical Datasheet:
N-Channel 100 V 80A (Tc) 125W (Tc) Surface Mount PG-TO263-3
| Category | Transistors - FETs, MOSFETs - Single | |
| Manufacturer | Infineon Technologies | |
| RoHS | 1 | |
| Packaging | Tape & Reel (TR) | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | PG-TO263-3 | |
| Base Product Number | IPB083 | |
| Technology | MOSFET (Metal Oxide) | |
| Series | OptiMOS™ | |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V | |
| Rds On (Max) @ Id, Vgs | 8.3mOhm @ 73A, 10V | |
| Vgs(th) (Max) @ Id | 3.5V @ 75µA | |
| Gate Charge (Qg) (Max) @ Vgs | 55 nC @ 10 V | |
| FET Feature | - | |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| Vgs (Max) | ±20V | |
| FET Type | N-Channel | |
| Drain to Source Voltage (Vdss) | 100 V | |
| Input Capacitance (Ciss) (Max) @ Vds | 3980 pF @ 50 V | |
| Power Dissipation (Max) | 125W (Tc) | |
| Other Names | IPB083N10N3 GDKR-ND IPB083N10N3G IPB083N10N3 G IPB083N10N3GATMA1DKR SP000458812 IPB083N10N3GATMA1TR IPB083N10N3 GDKR IPB083N10N3 GCT IPB083N10N3 G-ND IPB083N10N3 GCT-ND IPB083N10N3GATMA1CT IPB083N10N3 GTR-ND |
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