BSZ160N10NS3GATMA1
MOSFET N-CH 100V 8A/40A 8TSDSON
NOVA Part#:
312-2282672-BSZ160N10NS3GATMA1
Manufacturer:
Manufacturer Part No:
BSZ160N10NS3GATMA1
Standard Package:
5,000
Technical Datasheet:
N-Channel 100 V 8A (Ta), 40A (Tc) 2.1W (Ta), 63W (Tc) Surface Mount PG-TSDSON-8
| Category | Transistors - FETs, MOSFETs - Single | |
| Manufacturer | Infineon Technologies | |
| RoHS | 1 | |
| Packaging | Tape & Reel (TR) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | PG-TSDSON-8 | |
| Base Product Number | BSZ160 | |
| Technology | MOSFET (Metal Oxide) | |
| Series | OptiMOS™ | |
| Current - Continuous Drain (Id) @ 25°C | 8A (Ta), 40A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V | |
| Rds On (Max) @ Id, Vgs | 16mOhm @ 20A, 10V | |
| Vgs(th) (Max) @ Id | 3.5V @ 12µA | |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V | |
| FET Feature | - | |
| Package / Case | 8-PowerTDFN | |
| Vgs (Max) | ±20V | |
| FET Type | N-Channel | |
| Drain to Source Voltage (Vdss) | 100 V | |
| Input Capacitance (Ciss) (Max) @ Vds | 1700 pF @ 50 V | |
| Power Dissipation (Max) | 2.1W (Ta), 63W (Tc) | |
| Other Names | BSZ160N10NS3 GINTR-ND BSZ160N10NS3 G-ND BSZ160N10NS3 GINDKR-ND BSZ160N10NS3GATMA1CT BSZ160N10NS3 GINCT-ND BSZ160N10NS3G BSZ160N10NS3 GINDKR SP000482390 BSZ160N10NS3 GINTR BSZ160N10NS3 G BSZ160N10NS3GATMA1DKR BSZ160N10NS3GATMA1TR BSZ160N10NS3 GINCT |
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