SIA429DJT-T1-GE3
MOSFET P-CH 20V 12A PPAK SC70-6
NOVA Part#:
312-2285212-SIA429DJT-T1-GE3
Manufacturer:
Manufacturer Part No:
SIA429DJT-T1-GE3
Standard Package:
3,000
Technical Datasheet:
P-Channel 20 V 12A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK® SC-70-6
| Category | Transistors - FETs, MOSFETs - Single | |
| Manufacturer | Vishay Siliconix | |
| RoHS | 1 | |
| Packaging | Tape & Reel (TR) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | PowerPAK® SC-70-6 | |
| Base Product Number | SIA429 | |
| Technology | MOSFET (Metal Oxide) | |
| Series | TrenchFET® | |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V | |
| Rds On (Max) @ Id, Vgs | 20.5mOhm @ 6A, 4.5V | |
| Vgs(th) (Max) @ Id | 1V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 62 nC @ 8 V | |
| FET Feature | - | |
| Package / Case | PowerPAK® SC-70-6 | |
| Vgs (Max) | ±8V | |
| FET Type | P-Channel | |
| Drain to Source Voltage (Vdss) | 20 V | |
| Input Capacitance (Ciss) (Max) @ Vds | 1750 pF @ 10 V | |
| Power Dissipation (Max) | 3.5W (Ta), 19W (Tc) | |
| Other Names | SIA429DJT-T1-GE3DKR SIA429DJT-T1-GE3TR SIA429DJT-T1-GE3CT SIA429DJTT1GE3 |
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