C3M0280090D

SICFET N-CH 900V 11.5A TO247-3
NOVA Part#:
312-2264625-C3M0280090D
Manufacturer:
Manufacturer Part No:
C3M0280090D
Standard Package:
30
Technical Datasheet:

N-Channel 900 V 11.5A (Tc) 54W (Tc) Through Hole TO-247-3

More Information
CategoryTransistors - FETs, MOSFETs - Single
ManufacturerWolfspeed, Inc.
RoHS 1
Operating Temperature -55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device Package TO-247-3
Base Product Number C3M0280090
TechnologySiCFET (Silicon Carbide)
SeriesC3M™
Current - Continuous Drain (Id) @ 25°C 11.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)15V
Rds On (Max) @ Id, Vgs 360mOhm @ 7.5A, 15V
Vgs(th) (Max) @ Id 3.5V @ 1.2mA
Gate Charge (Qg) (Max) @ Vgs 9.5 nC @ 15 V
FET Feature-
Package / CaseTO-247-3
Vgs (Max)+18V, -8V
FET TypeN-Channel
Drain to Source Voltage (Vdss)900 V
Input Capacitance (Ciss) (Max) @ Vds 150 pF @ 600 V
Power Dissipation (Max) 54W (Tc)

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