IRF5801TRPBF
MOSFET N-CH 200V 600MA MICRO6
NOVA Part#:
312-2290096-IRF5801TRPBF
Manufacturer:
Manufacturer Part No:
IRF5801TRPBF
Standard Package:
3,000
Technical Datasheet:
N-Channel 200 V 600mA (Ta) 2W (Ta) Surface Mount Micro6™(TSOP-6)
| Category | Transistors - FETs, MOSFETs - Single | |
| Manufacturer | Infineon Technologies | |
| RoHS | 1 | |
| Packaging | Tape & Reel (TR) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | Micro6™(TSOP-6) | |
| Base Product Number | IRF5801 | |
| Technology | MOSFET (Metal Oxide) | |
| Series | HEXFET® | |
| Current - Continuous Drain (Id) @ 25°C | 600mA (Ta) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Rds On (Max) @ Id, Vgs | 2.2Ohm @ 360mA, 10V | |
| Vgs(th) (Max) @ Id | 5.5V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 3.9 nC @ 10 V | |
| FET Feature | - | |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 | |
| Vgs (Max) | ±30V | |
| FET Type | N-Channel | |
| Drain to Source Voltage (Vdss) | 200 V | |
| Input Capacitance (Ciss) (Max) @ Vds | 88 pF @ 25 V | |
| Power Dissipation (Max) | 2W (Ta) | |
| Other Names | IRF5801TRPBFTR IRF5801TRPBFDKR IRF5801TRPBFCT IRF5801TRPBF-ND SP001570104 |
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