SI8819EDB-T2-E1
MOSFET P-CH 12V 2.9A 4MICRO FOOT
NOVA Part#:
312-2265226-SI8819EDB-T2-E1
Manufacturer:
Manufacturer Part No:
SI8819EDB-T2-E1
Standard Package:
3,000
Technical Datasheet:
P-Channel 12 V 2.9A (Ta) 900mW (Ta) Surface Mount 4-MICRO FOOT® (0.8x0.8)
| Category | Transistors - FETs, MOSFETs - Single | |
| Manufacturer | Vishay Siliconix | |
| RoHS | 1 | |
| Packaging | Tape & Reel (TR) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | 4-MICRO FOOT® (0.8x0.8) | |
| Base Product Number | SI8819 | |
| Technology | MOSFET (Metal Oxide) | |
| Series | - | |
| Current - Continuous Drain (Id) @ 25°C | 2.9A (Ta) | |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 3.7V | |
| Rds On (Max) @ Id, Vgs | 80mOhm @ 1.5A, 3.7V | |
| Vgs(th) (Max) @ Id | 900mV @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 8 V | |
| FET Feature | - | |
| Package / Case | 4-XFBGA | |
| Vgs (Max) | ±8V | |
| FET Type | P-Channel | |
| Drain to Source Voltage (Vdss) | 12 V | |
| Input Capacitance (Ciss) (Max) @ Vds | 650 pF @ 6 V | |
| Power Dissipation (Max) | 900mW (Ta) | |
| Other Names | SI8819EDB-T2-E1-ND SI8819EDB-T2-E1TR SI8819EDB-T2-E1DKR SI8819EDB-T2-E1CT |
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