SIS176LDN-T1-GE3
N-CHANNEL 70 V (D-S) MOSFET POWE
NOVA Part#:
312-2285550-SIS176LDN-T1-GE3
Manufacturer:
Manufacturer Part No:
SIS176LDN-T1-GE3
Standard Package:
3,000
Technical Datasheet:
N-Channel 70 V 12.9A (Ta), 42.3A (Tc) 3.6W (Ta), 39W (Tc) Surface Mount PowerPAK® 1212-8
| Category | Transistors - FETs, MOSFETs - Single | |
| Manufacturer | Vishay Siliconix | |
| RoHS | 1 | |
| Packaging | Tape & Reel (TR) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | PowerPAK® 1212-8 | |
| Technology | MOSFET (Metal Oxide) | |
| Series | TrenchFET® Gen IV | |
| Current - Continuous Drain (Id) @ 25°C | 12.9A (Ta), 42.3A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 3.3V, 4.5V | |
| Rds On (Max) @ Id, Vgs | 10.9mOhm @ 10A, 4.5V | |
| Vgs(th) (Max) @ Id | 1.6V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 19 nC @ 4.5 V | |
| FET Feature | - | |
| Package / Case | PowerPAK® 1212-8 | |
| Vgs (Max) | ±12V | |
| FET Type | N-Channel | |
| Drain to Source Voltage (Vdss) | 70 V | |
| Input Capacitance (Ciss) (Max) @ Vds | 1660 pF @ 35 V | |
| Power Dissipation (Max) | 3.6W (Ta), 39W (Tc) | |
| Other Names | 742-SIS176LDN-T1-GE3TR 742-SIS176LDN-T1-GE3DKR 742-SIS176LDN-T1-GE3CT |
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