FCP190N65F

POWER FIELD-EFFECT TRANSISTOR, 2
NOVA Part#:
312-2276087-FCP190N65F
Manufacturer Part No:
FCP190N65F
Standard Package:
1
Technical Datasheet:

N-Channel 650 V 20.6A (Tc) 208W (Tc) Through Hole TO-220-3

More Information
CategoryTransistors - FETs, MOSFETs - Single
ManufacturerFairchild Semiconductor
RoHS 1
Operating Temperature -55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device Package TO-220-3
Base Product Number FCP190
TechnologyMOSFET (Metal Oxide)
SeriesFRFET®, SuperFET® II
Current - Continuous Drain (Id) @ 25°C 20.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs 190mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 5V @ 2mA
Gate Charge (Qg) (Max) @ Vgs 78 nC @ 10 V
FET Feature-
Package / CaseTO-220-3
Vgs (Max)±20V
FET TypeN-Channel
Drain to Source Voltage (Vdss)650 V
Input Capacitance (Ciss) (Max) @ Vds 3225 pF @ 25 V
Power Dissipation (Max) 208W (Tc)
Other NamesONSFSCFCP190N65F
2156-FCP190N65F

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