G3R30MT12K

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SIC MOSFET N-CH 90A TO247-4

NOVA Part#:

312-2263626-G3R30MT12K

Manufacturer:

Manufacturer Part No:

G3R30MT12K

Standard Package:

Technical Datasheet:

N-Channel 1200 V 90A (Tc) 400W (Tc) Through Hole TO-247-4

More Information
Category	Transistors - FETs, MOSFETs - Single
Manufacturer	GeneSiC Semiconductor
RoHS	1
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-247-4
Base Product Number	G3R30
Technology	SiCFET (Silicon Carbide)
Series	G3R™
Current - Continuous Drain (Id) @ 25°C	90A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	15V
Rds On (Max) @ Id, Vgs	36mOhm @ 50A, 15V
Vgs(th) (Max) @ Id	2.69V @ 12mA
Gate Charge (Qg) (Max) @ Vgs	155 nC @ 15 V
FET Feature	-
Package / Case	TO-247-4
Vgs (Max)	±15V
FET Type	N-Channel
Drain to Source Voltage (Vdss)	1200 V
Input Capacitance (Ciss) (Max) @ Vds	3901 pF @ 800 V
Power Dissipation (Max)	400W (Tc)
Other Names	1242-G3R30MT12K