NTH4L022N120M3S

JavaScript seems to be disabled in your browser. For the best experience on our site, be sure to turn on Javascript in your browser.

.mst-lazy {display:none;}

SIC MOS TO247-4L 22MOHM 1200V

NOVA Part#:

312-2273139-NTH4L022N120M3S

Manufacturer:

Manufacturer Part No:

NTH4L022N120M3S

Standard Package:

450

Technical Datasheet:

N-Channel 1200 V 68A (Tc) 352W (Tc) Through Hole TO-247-4L

More Information
Category	Transistors - FETs, MOSFETs - Single
Manufacturer	onsemi
RoHS	1
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-247-4L
Technology	SiCFET (Silicon Carbide)
Series	-
Current - Continuous Drain (Id) @ 25°C	68A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	18V
Rds On (Max) @ Id, Vgs	30mOhm @ 40A, 18V
Vgs(th) (Max) @ Id	4.4V @ 20mA
Gate Charge (Qg) (Max) @ Vgs	151 nC @ 18 V
FET Feature	-
Package / Case	TO-247-4
Vgs (Max)	+22V, -10V
FET Type	N-Channel
Drain to Source Voltage (Vdss)	1200 V
Input Capacitance (Ciss) (Max) @ Vds	3175 pF @ 800 V
Power Dissipation (Max)	352W (Tc)
Other Names	488-NTH4L022N120M3S