SI2324DS-T1-GE3

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Category	Transistors - FETs, MOSFETs - Single
Manufacturer	Vishay Siliconix
RoHS	1
Packaging	Tape & Reel (TR)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23-3 (TO-236)
Base Product Number	SI2324
Technology	MOSFET (Metal Oxide)
Series	TrenchFET®
Current - Continuous Drain (Id) @ 25°C	2.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	234mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id	2.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	10.4 nC @ 10 V
FET Feature	-
Package / Case	TO-236-3, SC-59, SOT-23-3
Vgs (Max)	±20V
FET Type	N-Channel
Drain to Source Voltage (Vdss)	100 V
Input Capacitance (Ciss) (Max) @ Vds	190 pF @ 50 V
Power Dissipation (Max)	1.25W (Ta), 2.5W (Tc)
Other Names	SI2324DS-T1-GE3DKR SI2324DS-T1-GE3CT SI2324DS-T1-GE3TR SI2324DS-T1-GE3-ND

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