SUD35N10-26P-GE3
MOSFET N-CH 100V 35A TO252
NOVA Part#:
312-2290537-SUD35N10-26P-GE3
Manufacturer:
Manufacturer Part No:
SUD35N10-26P-GE3
Standard Package:
2,000
Technical Datasheet:
N-Channel 100 V 35A (Tc) 8.3W (Ta), 83W (Tc) Surface Mount TO-252AA
| Category | Transistors - FETs, MOSFETs - Single | |
| Manufacturer | Vishay Siliconix | |
| RoHS | 1 | |
| Packaging | Tape & Reel (TR) | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | TO-252AA | |
| Base Product Number | SUD35 | |
| Technology | MOSFET (Metal Oxide) | |
| Series | TrenchFET® | |
| Current - Continuous Drain (Id) @ 25°C | 35A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 7V, 10V | |
| Rds On (Max) @ Id, Vgs | 26mOhm @ 12A, 10V | |
| Vgs(th) (Max) @ Id | 4.4V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 47 nC @ 10 V | |
| FET Feature | - | |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| Vgs (Max) | ±20V | |
| FET Type | N-Channel | |
| Drain to Source Voltage (Vdss) | 100 V | |
| Input Capacitance (Ciss) (Max) @ Vds | 2000 pF @ 12 V | |
| Power Dissipation (Max) | 8.3W (Ta), 83W (Tc) | |
| Other Names | SUD35N10-26P-GE3TR SUD35N10-26P-GE3DKR SUD35N10-26P-GE3CT SUD35N1026PGE3 |
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