SQD50N06-09L_GE3
MOSFET N-CH 60V 50A TO252
NOVA Part#:
312-2289045-SQD50N06-09L_GE3
Manufacturer:
Manufacturer Part No:
SQD50N06-09L_GE3
Standard Package:
2,000
Technical Datasheet:
N-Channel 60 V 50A (Tc) 136W (Tc) Surface Mount TO-252AA
| Category | Transistors - FETs, MOSFETs - Single | |
| Manufacturer | Vishay Siliconix | |
| RoHS | 1 | |
| Packaging | Tape & Reel (TR) | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | TO-252AA | |
| Base Product Number | SQD50 | |
| Technology | MOSFET (Metal Oxide) | |
| Series | TrenchFET® | |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Rds On (Max) @ Id, Vgs | 9mOhm @ 20A, 10V | |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 72 nC @ 10 V | |
| FET Feature | - | |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| Vgs (Max) | ±20V | |
| FET Type | N-Channel | |
| Drain to Source Voltage (Vdss) | 60 V | |
| Input Capacitance (Ciss) (Max) @ Vds | 3065 pF @ 25 V | |
| Power Dissipation (Max) | 136W (Tc) | |
| Other Names | SQD50N06-09L_GE3CT SQD50N06-09L_GE3TR SQD50N06-09L_GE3DKR SQD50N06-09L-GE3 SQD50N06-09L-GE3-ND |
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