BSC046N02KSGAUMA1
MOSFET N-CH 20V 19A/80A TDSON
NOVA Part#:
312-2280307-BSC046N02KSGAUMA1
Manufacturer:
Manufacturer Part No:
BSC046N02KSGAUMA1
Standard Package:
5,000
Technical Datasheet:
N-Channel 20 V 19A (Ta), 80A (Tc) 2.8W (Ta), 48W (Tc) Surface Mount PG-TDSON-8-1
| Category | Transistors - FETs, MOSFETs - Single | |
| Manufacturer | Infineon Technologies | |
| RoHS | 1 | |
| Packaging | Tape & Reel (TR) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | PG-TDSON-8-1 | |
| Base Product Number | BSC046 | |
| Technology | MOSFET (Metal Oxide) | |
| Series | OptiMOS™ | |
| Current - Continuous Drain (Id) @ 25°C | 19A (Ta), 80A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V | |
| Rds On (Max) @ Id, Vgs | 4.6mOhm @ 50A, 4.5V | |
| Vgs(th) (Max) @ Id | 1.2V @ 110µA | |
| Gate Charge (Qg) (Max) @ Vgs | 27.6 nC @ 4.5 V | |
| FET Feature | - | |
| Package / Case | 8-PowerTDFN | |
| Vgs (Max) | ±12V | |
| FET Type | N-Channel | |
| Drain to Source Voltage (Vdss) | 20 V | |
| Input Capacitance (Ciss) (Max) @ Vds | 4100 pF @ 10 V | |
| Power Dissipation (Max) | 2.8W (Ta), 48W (Tc) | |
| Other Names | BSC046N02KS G BSC046N02KSGAUMA1CT BSC046N02KSGAUMA1DKR BSC046N02KS GTR-ND BSC046N02KSG BSC046N02KS GCT-ND SP000379666 BSC046N02KS GTR BSC046N02KSGAUMA1TR BSC046N02KS GDKR BSC046N02KS GDKR-ND BSC046N02KS G-ND BSC046N02KS GCT |
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