SI3437DV-T1-GE3
MOSFET P-CH 150V 1.4A 6TSOP
NOVA Part#:
312-2285412-SI3437DV-T1-GE3
Manufacturer:
Manufacturer Part No:
SI3437DV-T1-GE3
Standard Package:
3,000
Technical Datasheet:
P-Channel 150 V 1.4A (Tc) 2W (Ta), 3.2W (Tc) Surface Mount 6-TSOP
| Category | Transistors - FETs, MOSFETs - Single | |
| Manufacturer | Vishay Siliconix | |
| RoHS | 1 | |
| Packaging | Tape & Reel (TR) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | 6-TSOP | |
| Base Product Number | SI3437 | |
| Technology | MOSFET (Metal Oxide) | |
| Series | TrenchFET® | |
| Current - Continuous Drain (Id) @ 25°C | 1.4A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V | |
| Rds On (Max) @ Id, Vgs | 750mOhm @ 1.4A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 19 nC @ 10 V | |
| FET Feature | - | |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 | |
| Vgs (Max) | ±20V | |
| FET Type | P-Channel | |
| Drain to Source Voltage (Vdss) | 150 V | |
| Input Capacitance (Ciss) (Max) @ Vds | 510 pF @ 50 V | |
| Power Dissipation (Max) | 2W (Ta), 3.2W (Tc) | |
| Other Names | SI3437DV-T1-GE3DKR SI3437DV-T1-GE3CT SI3437DVT1GE3 SI3437DV-T1-GE3TR |
In stock Need more?
$0.39780
Not the price you want? Fill the forms and we'll contact you ASAP.
We found other products you might like!
BSS84PH6327XTSA2Infineon Technologies
SS10100FL-AU_R1_000A1Panjit International Inc.
V20202C-M3/4WVishay General Semiconductor - Diodes Division
UCC27519DBVRTexas Instruments
SUD50P10-43L-GE3Vishay Siliconix
SI3437DV-T1-E3Vishay Siliconix- SI3440DV-T1-E3Vishay Siliconix
V8PM15HM3/HVishay General Semiconductor - Diodes Division
RSQ015P10TRRohm Semiconductor- SUD90330E-GE3Vishay Siliconix
NTMFS006N12MCT1Gonsemi- NTMFS5C670NLT3Gonsemi
BAT54S,215Nexperia USA Inc.
